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A Low-Cost and Low-Power CMOS Receiver Front-End for MB-OFDM Ultra-Wideband Systems要该文全文，更换别的论文，或要中英文对照都可以找我Mahim Ranjan, Member, IEEE, and Lawrence E Larson, Fellow, IEEE0Abstract—This paper presents an RF receiver front-end for MB-OFDM-based ultra-wideband (UWB) The receiver occupies only 35 in a 18 CMOS process and consists of a low-noise amplifier, downconverter and a bandpass There are no on-chip inductors and the receiver requires no off-chip matching The measured receiver gain is 21 dB, noise figure is less than 6 dB, input IIP3 is 6 dBm, and the receiver consumes 5 mA from a 3 V The receivercovers all the MB-OFDM bands from 1 to 8 GHIndex Terms—CMOS, distortion, OFDM, receiver, ultra wideband, UWBI INTRODUCTIONULTRA-WIDEBAND (UWB)multi-band orthogonal frequency-division multiplexing (MB-OFDM) systems have been proposed as an emerging solution to wireless communicationapplications requiring high data rates (up to 480 Mb/s) over short In one proposed version [1], the carrier, with a bandwidth of 528 MHz, can hop to one of 14 channels（2904+528n,n=123…14）, divided into four groups of three channels and one group of two This representative time-frequency interleaving for a Group 1-only systemis depicted in F Design of a receiver for such a systempresents many challenges due to the wide bandwidth of the RF front- However, to assure the widest possible adoption, RF portions of these systems should consume little DC power and die area, and be implemented in a standard CMOS These last requirements argue against the use of on-chip inductors wherever Since theUWBfront-end intrinsically possesses a wide bandwidth, it is open to reception of undesired narrowband signals such as 11 a/b/g and the recently proposedWiMAX [2] systems, as shown in F Although OFDM systems are less susceptible to relatively narrowband jammers, nonlinearities in the receiver can result in jammer cross-modulation with wideband input signals, resulting in reduced signal-to-noise ratio (SNR) and a degradation in system performance [3] In addition, received wideband signals (from other UWB transmitters) can intermodulate and the resulting products can land in a desired Since the system is inherently wideband, harmonic distortion of a single unwanted UWB transmitter can also produce in-band distortion products and reduce the SNR For the system to successfully operate in such a hostile environment, the linearity specifications of the receiver need to include these distortion F Representative time-frequency interleaving pattern of a Group 1MB-OFDM signal [1] F Representative spectrum at an MB-OFDM receiver This paper describes a UWB heterodyne receiver front-end that is designed to minimize the effects of wideband jammers from a variety of undesired sources [4] In addition, the receiver is designed to minimize silicon area, so on-chip inductors are not The receiver architecture is presented in Section II Specifications for the receiver are derived in Section III Detailed block design is presented in Sections IV–VI Layout and packaging of the chip is discussed in Section VII Measured results are presented in Section VIII, followed by a conclusion in Section IXII RECEIVER ARCHITECTUREWhen it comes to designing a low-power and low-cost receiver, the traditional choice is a direct conversion However, a direct conversion UWBreceiver, while attractive for power consumption and simplicity of its local oscillator (LO) scheme [5], [6], has a well-known problem of time-varying DC offset and sensitivity to narrowband A DC offset at the output of the receiver can degrade the SNR of the digitized baseband In addition, it can introduce second-order distortion in the baseband signal, which further degrades the SNR A Low-Cost and Low-Power CMOS Receiver Front-End for MB-OFDM Ultra-Wideband SystemsMahim Ranjan, Member, IEEE, and Lawrence E Larson, Fellow, IEEE0Abstract—This paper presents an RF receiver front-end for MB-OFDM-based ultra-wideband (UWB) The receiver occupies only 35 in a 18 CMOS process and consists of a low-noise amplifier, downconverter and a bandpass There are no on-chip inductors and the receiver requires no off-chip matching The measured receiver gain is 21 dB, noise figure is less than 6 dB, input IIP3 is 6 dBm, and the receiver consumes 5 mA from a 3 V The receivercovers all the MB-OFDM bands from 1 to 8 GHIndex Terms—CMOS, distortion, OFDM, receiver, ultra wideband, UWBI INTRODUCTIONULTRA-WIDEBAND (UWB)multi-band orthogonal frequency-division multiplexing (MB-OFDM) systems have been proposed as an emerging solution to wireless communicationapplications requiring high data rates (up to 480 Mb/s) over short In one proposed version [1], the carrier, with a bandwidth of 528 MHz, can hop to one of 14 channels（2904+528n,n=123…14）, divided into four groups of three channels and one group of two This representative time-frequency interleaving for a Group 1-only systemis depicted in F Design of a receiver for such a systempresents many challenges due to the wide bandwidth of the RF front- However, to assure the widest possible adoption, RF portions of these systems should consume little DC power and die area, and be implemented in a standard CMOS These last requirements argue against the use of on-chip inductors wherever Since theUWBfront-end intrinsically possesses a wide bandwidth, it is open to reception of undesired narrowband signals such as 11 a/b/g and the recently proposedWiMAX [2] systems, as shown in F Although OFDM systems are less susceptible to relatively narrowband jammers, nonlinearities in the receiver can result in jammer cross-modulation with wideband input signals, resulting in reduced signal-to-noise ratio (SNR) and a degradation in system performance [3] In addition, received wideband signals (from other UWB transmitters) can intermodulate and the resulting products can land in a desired Since the system is inherently wideband, harmonic distortion of a single unwanted UWB transmitter can also produce in-band distortion products and reduce the SNR For the system to successfully operate in such a hostile environment, the linearity specifications of the receiver need to include these distortion

HDB3 yards ( third-order high-density dual polarity yards) is the most commonly used in modern transmission system is one of the MaXing, is widely This study is based on the main content of the HDB3 yards encoder CPLD device First of HDB3 yards and CPLD application and research status were introduced, This paper used to MaxPlusII and VHDL language software, Finally HDB3 yards are analyzed in detail by VHDL language encoding principle and realization Based on the principle of coding HDB3 yards, the paper analyzes the design scheme of HDB3 code design mainly divided into three coder realized module ( insert V module, modeling and realize the modeling and realization, B module modeling and realize polarity transform module) After completion, the software design in the simulation, MaxPlus2 test results and the design idea of early, so right, completed based on simulation HDB3 code design of CPLD

PickHDB3 yards ( third-order high-density dual polarity yards) is the most commonly used in modern transmission system is one of the MaXing, is widely This study is based on the main content of the HDB3 yards encoder CPLD device First of HDB3 yards and CPLD application and research status were introduced, This paper used to MaxPlusII and VHDL language software, Finally HDB3 yards are analyzed in detail by VHDL language encoding principle and realization Based on the principle of coding HDB3 yards, the paper analyzes the design scheme of HDB3 code design mainly divided into three coder realized module ( insert V module, modeling and realize the modeling and realization, B module modeling and realize polarity transform module) After completion, the software design in the simulation, MaxPlus2 test results and the design idea of early, so right, completed based on simulation HDB3 code design of CPLD Keywords: HDB3, VHDL, Polarity transformation