半导体论文翻译

半导体的分类，按照其制造技术可以分为：集成电路器件，分立器件、光电半导体、逻辑IC、模拟IC、储存器等大类，一般来说这些还会被分成小类。此外还有以应用领域、设计方法等进行分类，虽然不常用，但还是按照IC、LSI、VLSI（超大LSI）及其规模进行分类的方法。此外，还有按照其所处理的信号，可以分成模拟、数字、模拟数字混成及功能进行分类的方法。 半导体五大特性∶电阻率特性，导电特性，光电特性，负的电阻率温度特性，整流特性。半导体应用 最早的实用“半导体”是「电晶体（Transistor）/ 二极体（Diode）」。 一、在 无�电收音机（Radio）及 电视机（Television）中，作为“讯号放大器 /整流器”用。 二、近来发展「太阳能（Solar Power）」，也用在「光电池（Solar Cell）」中。 三、半导体可以用来测量温度，测温范围可以达到生产、生活、医疗卫生、科研教学等应用的70%的领域，有较高的准确度和稳定性，分辨率可达℃，甚至达到℃也不是不可能，线性度，测温范围-100~+300℃，是性价比极高的一种测温元件。 半导体材料的制造 为了满足量产上的需求，半导体的电性必须是可预测并且稳定的，因此包括掺杂物的纯度以及半导体晶格结构的品质都必须严格要求。常见的品质问题包括晶格的错位（dislocation）、双晶面（twins），或是堆栈错误（stacking fault）都会影响半导体材料的特性。对于一个半导体元件而言，材料晶格的缺陷通常是影响元件性能的主因。 目前用来成长高纯度单晶半导体材料最常见的方法称为裘可拉斯基制程（Czochralski process）。这种制程将一个单晶的晶种（seed）放入溶解的同材质液体中，再以旋转的方式缓缓向上拉起。在晶种被拉起时，溶质将会沿着固体和液体的接口固化，而旋转则可让溶质的温度均匀。

First, semiconductor laser based on the theoryAlthough some literature that the author created in their respective semiconductor lasers in the important role played by, but the fact is no one on semiconductor laser to the emergence of a complete theoretical basis, nor an early worker for the realization of the study and solve the semiconductor laser All the technology issues. Therefore, it can be that the semiconductor laser is the emergence and development of many co-workers on the crystallization of early as in September 1953, the . Feng. Newman (John Von Neumann) in his unpublished papers a manuscript in the first exposition in the semiconductor produced by stimulated emission of possibility that can be injected to the PN junction Are in the minority in mind to achieve stimulated emission; calculated according to the two brilliant transition zone between the radiation rate. Bading concluded Feng 'Newman on the basic theory of semiconductor laser after that. Through various means (for example, to inject a small number of PN junction carrier) disturbance belt electronic price band Hole and the balance of concentration, according to which non-minority-carrier in the compound and a photon. The rate of its radiation can be like amplifiers, with the same frequency of electromagnetic radiation. It should be said to be laser (Liser) the earliest concept of this than Gordon (Corden) and the Andean soup (Towes) reported by the quantum of microwave amplifiers (Maser) to the concept as early as Normale Superieure and Pierre Aigrain in 1956 had encouraged the . radio company [RCA] Pankove start manufacturing the semiconductor laser. June 1958 in Brussels of an international conference on the statement, first published in the semiconductor be coherent light of the views, but it was not until 1964 he published articles on the theory of semiconductor lasers and experimental work. Soviet Lebedev Physical Institute Basov (Basov), and so on the outstanding contribution of semiconductor lasers, he is the first time in 1958 published an article in the semiconductor raised in the realization of negative-state (that is, population inversion) on the theory . In 1961 they published the first carrier will be injected into the semiconductor PN junction to achieve the "injection laser" exposition and demonstration in the tunnel diodes as high as in Jane and the PN junction to achieve population inversion (which is Produced by stimulated emission of the necessary conditions for) the possibility, but also that active high-density areas around the most active carrier of the border areas on both sides of the refractive index of a difference, creating optical waveguide effect. After these theories to the emergence of semiconductor laser has played a positive role in promoting, Basuo Fu therefore be Nobel Prize. However, in 1963, published by the Basuo Fu, and so on semiconductor laser experiment with the theory of the article is more active semiconductor materials for Ge. And La Vieques (Lax) in 1959 made direct bandgap semiconductor (such as GaAs, InP, etc.) than the indirect bandgap semiconductor (such as Ge, Si, etc.) is more suited to produce stimulated emission of material. This important thesis for the accuracy of which appear later confirmed by the semiconductor Bell Labs of Wembley (Boyle) and Thomson put forward in parallel with the semiconductor and as a cleavage-feedback resonator, the strengthening of the laser is essential. Laser optical resonator is an integral Bernard (Bernard) and Dulafuge (DM raffo "rg)-use fee. Derived the concept of energy meters in the semiconductor active than in the medium to achieve population inversion conditions on the condition that the following year The success of semiconductor laser research has played an important guiding role of sum up, in theory, that should be in the semiconductor laser direct bandgap semiconductor PN junction, with the injection-carrier method by Bernard Dulafuge a condition under the control of population inversion, from electronics and Hole compound generated by the laser radiation in the optical resonant cavity oscillation be enlarged and, finally have a coherent laser output.

1. Semiconductor laser also known as laser diodes (LD). Into the 1980s, people absorb the semiconductor development of the latest achievements in physics, using a quantum well (QW) and strained quantum well (SL-QW), and other new structures, the introduction of index modulation Bragg launchers and enhanced modulation Bragg launchers The latest technology, and also the development of the MBE, MOCVD and the CBE, and other new technology of crystal growth, making the new epitaxial growth technology to precisely control the crystal growth, to achieve the precision of atomic layers thick, high-quality grown quantum wells and strained quantum well materials. Thus, to create the LD, the threshold current significant drop significantly improve the conversion efficiency, output power have increased significantly lengthen life. 2. Optoelectronics, the rapid development mainly based on quantum mechanics and materials science in the development, with particular attention is the development of optoelectronic semiconductors. LED, LD Shenqi these electronic devices is the result of this development, particularly the recent development of the organic photoelectric materials, and more is great to promote the progress of the photoelectric materials. Why is the first semiconductor LED » When the electronic conduction band jumped from the top to enter the zone at the time, a certain loss of energy, the energy becomes a photon emission out, is popular to say that the luminescence. Oh:) semiconductor laser is a direct bandgap semiconductor materials constitute the PN junction of material or PIN entered into a small laser. Semiconductor laser work of dozens of substances, has made laser Jia arsenide semiconductor material (GaAs), arsenic Gu (InAs), gallium nitride (GaN), antimony and Gu (InSb), curing the pot (cds), hoof-fu (CdTe), lead selenide (PbSe), tellurium and lead (PhTe ), Al Jia arsenic (A1xGa, -, As), Gu phosphorus arsenic (In-PxAS), and so on. Semiconductor laser incentive There are three main ways, that is, people-Note, optical pump-and-high-energy electron beam incentives. The vast majority of Semiconductor laser is the way of incentives, Notes, or to Pn guitar and forward voltage, so that the guitar in a regional plane stimulated emission, that is a positive bias of the diodes, also known as the semiconductor laser diode laser diode . On the semiconductor, electronics is due in the transition between the band, rather than in discrete energy levels between the transition, the transition energy is not a set value, which makes semiconductor laser output wavelength distribution in a very broad The scope. They issued by the wavelength of between . Wavelength range of its decision on the materials used by the band gap, the most common is AlGaA: double-heterojunction laser, the output wavelength of 750 - 890nm. The world On the first semiconductor laser is available in 1962, after several decades of research, semiconductor laser achieved a surprising development, and its infrared wavelengths from the red light green to blue, gradually expanding the scope covered, the performance Parameters also have greatly increased their production by the proliferation of technology has to LPE Law Act (LPE), extension of gas (VPE), MBE Act (MBE), MOCVD method (metal organic compounds vapor deposition) , Chemical beam epitaxy (CBE) and their various combined, and other technology. Lasing closure of its current value from a few hundred mA down to a few dozen mA, until the sub-mA, its life expectancy by a few hundred to tens of thousands of hours, and 1 million hours from the initial low-temperature (77 K) under development to operate at room temperature for work, the power output by several milliwatts to kilowatts level (Array) it has a high efficiency, small size, light weight, simple structure, can Power for the direct conversion of laser energy, high power conversion efficiency (has reached more than 10 per cent, up to 50 per cent). Facilitate direct modulation, power-saving advantages, applications growing. At present, the fixed-wavelength laser diode to use the number of Habitat All of the first laser, the application of certain important areas over the past used the other lasers, has gradually been replaced by a semiconductor laser. Semiconductor Laser is the biggest drawback: laser properties affected by temperature, the beam divergence angle greater (in general several times to 20 degrees), so in the direction and coherence of monochrome and other poor areas. But with the With the rapid development of science and technology, the semiconductor laser-depth study positive direction, the performance of semiconductor laser continuously improve. Semiconductor laser power can reach very high level, and beam quality has been greatly improved. Semiconductor laser as to The core semiconductor photonics technology in the 21st century information society will make more progress, play a bigger role.

Power semiconductor devices and power electronics World's first semiconductor rectifier and the transistor is, when no power semiconductor or microelectronics semiconductor division. In 1958, China began the first research topic Thyristor (originally known as PNPN device). In similar time, the study of integrated circuits began gradually. From semiconductor devices to the two direction. The former became the basis for power electronics, while the latter led to the development and micro-electronics and information electronics. According to the system, power system devices are classified to the machinery, integrated circuits, electronic systems are included. As the semiconductor leader in the electronic systems, coupled with the semiconductor integrated circuits is the main body, which after a long-term evolution of integrated circuits in a number of occasions, has become almost synonymous with semiconductor devices only. At the end of the sixties and early seventies, the country has set off a "SCR" hot. The boom continued a long time, great influence, and therefore still believe that the domestic power of semiconductors is the main SCR. The late seventies, the development of a thyristor family. And called the name of a standardized "thyristor." As the technology to regulate the power switch, so the wear and tear on a small device, so as the energy trump card. Its application is to cover all fields. China was first mooted in 1979, the establishment of Power Electronics Society, IEEE slightly earlier than the establishment of the United States Institute of Power Electronics (Power Electronics Society). Power Electronics Society of China was founded, as a result of the importance of professional development is very rapid. However, because the focal point was the relationship, it does not like the United States become an independent professional institutes, and was subsequently set up part of the China Electrotechnical Society. The translation and definition of Power Electronics for Power Electronics (the original idea was also known as the Power Electronics), and the popularity of power electronics played a role. Mechanical, electrical, electronic and other departments are very concerned about its development. Related to the power semiconductor devices has also been known as the power electronic devices. However, this name is very difficult to find abroad, but the corresponding terms. "Electricity" in reference to electronic access to universal, but also left a number of sequels. People mistakenly believe that only high-power direction is the "power" of the main electronic devices, and the difficulty of the rapid development of the MOSFET as a "power electronics" of the other main. From that point, I would like to use power semiconductor devices as the subject of this article, and power electronic devices can be used to express a broader sense to include other non-semiconductor, including a variety of power electronic devices. The development of power semiconductor devices in three stages The development of power semiconductor devices can be divided into three stages. The first stage is 60 to the seventies, when the various types of thyristors and power transistors Darlington significant development, or what might be called the era of bipolar. Its clients are mainly for industrial applications, including power systems, such as locomotive traction. The second stage is 80 to the nineties, due to the rise of the power MOSFET to power electronics into a new area. Modern 4C booming industry: the Communication, Computer, Consumer, Car (communication, computer, consumer electronics, automobiles) to provide a new vitality. Before and after the twenty-first century, the development of power semiconductor devices have entered the third phase, that is, and integrated circuit combined with a growing stage, Figure 1 and Figure II made to the above description of a simple sum. Of course, first of all need to focus on that here is this: when the continuous development of power semiconductor devices, the previous stage has not been the dominant product from the stage of history. For example, SCR is still an important product. China has in recent years the introduction of ultra-high-power thyristor, thyristor-controlled technology, such as China's major power transmission project, providing a key device. Recently, in considering the introduction of IGCT technology. In this regard it should be said that has gradually moved towards the world. This is our country going on the many major infrastructure. Although the view from the United States, the production of high-power thyristors have been less and less on the economic development of the two countries are not identical. I draw in Figure 2 in power semiconductor devices in both directions in the development. The left side of the bipolar nature of the direction toward the integration of ultra-high-power and direction. The right direction is unipolar, it is more established and integrated circuits of the inseparable relationship between closely.

4。氮化物半导体的导电控制。蓝色发现的p -型导电交界的n氮化镓GaN和实现的P -发光二极管没有成功，许多团体试图制造p型氮化镓但。随着氮化镓晶体质量控制成功的，我们就可以开始工作，在p型掺杂。使用的LT - AlN缓冲层，密度氮化镓残余捐助也大幅下降如上所述。但在上尽管一再努力锌掺杂，它不可能产生p型氮化镓。 1987年，我们发现，发光强度锌有关的大量增加时，高品质的锌掺杂的GaN层与成长的LT - AlN缓冲了电子束照射在阴极发光（CL）的测量[21]。我们认为这种现象（称为电子束的影响）[21]可能是密切相关的传导与活化锌，因此与受体PTYPE的。但晶体并没有显示p型传导。与此同时，在1988年，我们注意到，可能是受体镁锌浅比，因为它的电是]大22比锌[。 1989年，我们成功地在镁掺杂高品质氮化镓使用镁掺杂Cp2Mg或MCP2Mg作为一个同时保持AlN缓冲层技术的高品质结晶使用的LT - [23]。然后镁掺杂GaN样品进行照射用电子束在掺杂样品一样的锌。我们发现效果大大提高电子束蓝色发光这些Mgdoped氮化镓样品（部门）以及低电阻率的样品是p型氮化镓[24]。随即，我们实现了世界上第一个氮化镓的p - n结蓝/紫外发光二极管令人鼓舞的I - V特性于1989年[24]，如图所示研究。 5。我们实现了p型氮化铝镓在1991年[25]和p型GaInN在1995年[26]以相同的方式。 1992年，PTYPE的氮化镓也产生Mgdoped氮化镓铝热退火成长与缓冲层，中村等的LT - GaN的。 [27]。后来，p型氮化镓紫外得到[28]或电磁波辐射[29,30] 400集成电路在高温下。为了实现p型氮化物，就必须激活[31镁受体释放氢气，32]。但是，我们首先要大幅度降低钝化受体的剩余供氢之前解决相关的问题。