可见光通信论文英文文献

位置：首页→分类商机文章→电子通讯专利库 →通信技术 传输专利技术全文光盘系列（7） 以下目录为专利技术或科技文献名称列表。 价格为280元/套以下所有资料均电子文档，可以查看、打印、复制，电脑光盘形式寄送。 本站不销售和生产以下专利相关的产品和设备。 专利资料为国家专利全文说明书。含技术配方、加工工艺、说明书附图。 交付方式：款到发货。通过快递公司或邮局EMS快递。 光盘订购和定制服务，敬请联络我们，汇款购买方式可以点击这里查看[CHB04-007-001] 码分多址通信系统的无线电信号转播设备[CHB04-007-002] 甚小天线地球站网中的数字无线通信方法和系统结构[CHB04-007-003] 寻呼机数据备份方法[CHB04-007-004] 增音装置[CHB04-007-005] 电缆接入单元自适应RF功率控制的方法和装置[CHB04-007-006] 光纤电缆干线网络载线自动测试告警系统及其测试方法[CHB04-007-007] 共线再生WDM孤子信号的同步调制方法和装置及光通信系统[CHB04-007-008] 至少有两颗卫星可见的卫星电信网络中功率调节的方法[CHB04-007-009] 防止分集工作用的耦合器中归一化电压发散的归一化电路[CHB04-007-010] 扩频解调单元[CHB04-007-011] 多频带移动单元通信设备[CHB04-007-012] 具有背后照明显示器的无线通信装置[CHB04-007-013] 具有少量本机振荡器的多频段移动收发信机[CHB04-007-014] 频率漂移补偿的无线通信装置和方法[CHB04-007-015] 用于数字无线通信系统的自动频率控制电路[CHB04-007-016] 确定CDMA无线电接收机中加权系数的方法[CHB04-007-017] 用于TDD/FDD的无线通信便携式手持电话[CHB04-007-018] 用于多位置数据无线通信系统中讯息预定的装置[CHB04-007-019] 提高可靠性的无线电回路测试方法和利用该测试方法的系统[CHB04-007-020] 通信方法和通信设备[CHB04-007-021] 接收方法和接收设备[CHB04-007-022] 卫星遥感多星接收可编程格式化同步器[CHB04-007-023] 避免超越控制信号范围传播的分集增益控制的窝位发射[CHB04-007-024] 电力线复用数字多路电话及综合信息传输系统[CHB04-007-025] 远端监视装置[CHB04-007-026] 收发两用机[CHB04-007-027] 多载波信号频率校正的方法和相关装置[CHB04-007-028] 信号处理电路[CHB04-007-029] 在无线通信中系统减少干扰降低噪声影响的信号处理装置及方法[CHB04-007-030] 在无线分组数据传送中发射功率的控制[CHB04-007-031] 能在出现故障时避免中断的发射机[CHB04-007-032] 混合光纤/同轴电缆视频和电话通信系统[CHB04-007-033] 提供自备无线电通话群组态配置的方法[CHB04-007-034] 用于信道估值的方法和装置[CHB04-007-035] 可减少由电源变换电路产生的电磁干扰的无线电接收装置[CHB04-007-036] 用于平均功率控制的方法与装置[CHB04-007-037] 话音信道延迟发送快速对应控制信道消息的方法和系统[CHB04-007-038] 采用多个卫星星座的定位和通信系统[CHB04-007-039] 安装在机壳或类似装置中的电信设备冷却系统[CHB04-007-040] 含光接收器件的光学模块[CHB04-007-041] 使用便携电话话筒/耳机插口的无线数据通信系统[CHB04-007-042] 用于发射机路径加权的装置与方法[CHB04-007-043] 用于无线电话系统的自调整射频转发器[CHB04-007-044] 分集接收机及其控制方法[CHB04-007-045] 缆线通信系统和方法[CHB04-007-046] 组合式壳体结构系统[CHB04-007-047] 具有插在发射机变频器和发射机天线之间的可变增益电路的CDMA发射机[CHB04-007-048] 移动电话系统中实现非连续传输的方法[CHB04-007-049] 联播无线通信系统中识别发射机的方法与装置[CHB04-007-050] 语音信号传输方法及语音编码和解码系统[CHB04-007-051] 具有外部和内部电台的建筑物内部通信系统[CHB04-007-052] 无线电数据通信方法[CHB04-007-053] 同频准双工无中心频分多址抗噪载波通信系统[CHB04-007-054] 光网络[CHB04-007-055] 用于在时分多址无线系统中指示多时隙信道的方法[CHB04-007-056] 利用地球同步卫星及低轨道运行卫星的个人通信[CHB04-007-057] 基站[CHB04-007-058] 包括移动台和基站的通信系统[CHB04-007-059] 供盲人使用的对话型RF引导系统及其控制方法[CHB04-007-060] 利用并行链接编码的卫星通信系统[CHB04-007-061] 分集法、无线电接收机和无线电系统[CHB04-007-062] 改良型双转换式无线电收发系统[CHB04-007-063] 能减少电流消耗的间歇收信设备[CHB04-007-064] 利用近似非相干方法进行失真校正的光学系统[CHB04-007-065] 无线电话呼叫切换[CHB04-007-066] 用于非线性传输介质的传输系统[CHB04-007-067] 接收机电路[CHB04-007-068] 用于减小相对运动的卫星系统信号间干扰的通信管理方法[CHB04-007-069] 分组化码分多址/时分多路卫星通信系统[CHB04-007-070] 用于HFC系统的各种路由的自动定时调整[CHB04-007-071] 产生伪随机噪声序列的方法和装置[CHB04-007-072] 多功能便携式电子收发信机[CHB04-007-073] 便携式RF发射端的温度补偿宽动态范围功率检测电路[CHB04-007-074] 流动台发射功率的控制方法[CHB04-007-075] 通信系统中改进的信道估算方法[CHB04-007-076] 多功能自适应电话线测量方法及系统[CHB04-007-077] 光通讯系统[CHB04-007-078] 分集类型无线电装置及将其接收信号合成的方法[CHB04-007-079] 减少由断续发送无线发射机引起的对电子设备干扰的系统[CHB04-007-080] 通信系统及其一种方法[CHB04-007-081] 选呼无线通信系统中自适应选择通信策略的方法和装置[CHB04-007-082] 双模式调频/码分多址通信系统[CHB04-007-083] 使用频谱切割光源的光通信系统[CHB04-007-084] 延迟检测的MRC分集电路[CHB04-007-085] 分集接收机[CHB04-007-086] 码多分址通信系统[CHB04-007-087] 扩展频谱接收设备[CHB04-007-088] 通信网内传输压缩语音信息的方法和系统[CHB04-007-089] 无线电信设备[CHB04-007-090] 自检测收发信机[CHB04-007-091] 用于无源辐射测量成象系统的直接检测接收机[CHB04-007-092] 长波信号及中波信号接收电路[CHB04-007-093] 射频功率分配器/组合器电路[CHB04-007-094] 具有显示屏的便携式无线电装置[CHB04-007-095] 在直接方式信道上截接移动站[CHB04-007-096] 多路接入电信网络[CHB04-007-097] 具有任选板接口和与其一起使用的任选板的无线电设备[CHB04-007-098] 一种扩频地址编码技术[CHB04-007-099] 小型无线电接收机[CHB04-007-100] 周期包数据传输系统中的接收机[CHB04-007-101] 移动通信系统中的定向分集信道分配[CHB04-007-102] 提高接收机抗扰度的方法和装置[CHB04-007-103] 数字补偿的直接转换接收器[CHB04-007-104] 便携式终端[CHB04-007-105] 信息终端[CHB04-007-106] 用于转接码分多址已调束的方法与装置[CHB04-007-107] 用于无线通信设备的综合分集电路[CHB04-007-108] 位串行数字扩展器[CHB04-007-109] 一种电子设备的键盘排列[CHB04-007-110] 多点到点通信系统[CHB04-007-111] 用于光纤传输系统的分支单元[CHB04-007-112] 具有用于最佳适应的卡尔曼滤波器的回声消除器[CHB04-007-113] 扩频电信系统[CHB04-007-114] 用预定的滤波器系数的数字滤波器和方法[CHB04-007-115] 电话集中机的通信方法及有线无线电话集中机[CHB04-007-116] 通过有噪声的用于高速数值传输的最大后验概率接收机[CHB04-007-117] 在移动通信系统中进行功率控制的方法和装置[CHB04-007-118] 为母线系统产生交流电压信息的方法和实施该方法的发送级[CHB04-007-119] 便携终端设备[CHB04-007-120] 回波补偿方法和装置[CHB04-007-121] 信息信号通信设备、方法和系统[CHB04-007-122] 光学网络[CHB04-007-123] 一种估算信号和噪声质量的方法和一种接收机[CHB04-007-124] 直接系列广谱通信系统中的自动增益控制装置和方法[CHB04-007-125] 用于产生信号波形的沃尔什QPSK片调制设备[CHB04-007-126] 在数字接收机中产生噪声的装置和方法[CHB04-007-127] 处理地区专用和超地区道路或区域标记用的RDS-TMC无线电接收机[CHB04-007-128] 射频发射机的功率控制电路[CHB04-007-129] 通讯方法，发射装置，发射方法，接收装置和接收方法[CHB04-007-130] 监测数字化信号传输质量的方法[CHB04-007-131] 扩频通信系统全频谱发射功率跟踪收方相时和能量的方法和设备[CHB04-007-132] 带有VCSEL光源的红外数据交联数据链路[CHB04-007-133] 基于卫星的通信系统中进行自适应路由选择的方法和设备[CHB04-007-134] 伪随机噪声序列发生器[CHB04-007-135] 光放大器设备[CHB04-007-136] 在扩展谱通信系统中使用沃尔什移位键控的方法和装置[CHB04-007-137] 时间分集无线电系统中的消息分段[CHB04-007-138] 用于接入通信系统的方法与装置[CHB04-007-139] 一种控制发射功率的方法和一种无线系统[CHB04-007-140] 具有漫游能力的消息处理系统和方法[CHB04-007-141] 用于光学放大网络中减轻交叉饱和现象的系统和方法[CHB04-007-142] 具有语音辩识功能的遥控装置[CHB04-007-143] 采用业务消息的发射功率跟踪装置[CHB04-007-144] 多路复用型发送设备[CHB04-007-145] 在具有星上TDMA格式转换的移动卫星通信系统中用于移动站到移动站呼叫的方...[CHB04-007-146] 用于在通信系统中提供确认的方法和设备[CHB04-007-147] 接收方法和接收机[CHB04-007-148] 商品寻呼防伪技术[CHB04-007-149] 选择呼叫接收机和控制增益的方法[CHB04-007-150] 瑞克接收机[CHB04-007-151] 在数字射频通信系统中估算信道参数的方法和装置[CHB04-007-152] 行情信息的高效传输方法[CHB04-007-153] 数字声音传输系统[CHB04-007-154] 采用时分双工/频率跳跃的无线通信系统[CHB04-007-155] 直接序列码分多址通信中初始同步方法及接收机[CHB04-007-156] 干扰信号消除系统[CHB04-007-157] 采用空间最大似然的联合解调[CHB04-007-158] 无线电通信系统[CHB04-007-159] 变速通信和重现系统[CHB04-007-160] 无线通信系统中传送全局事件信息的方法和装置[CHB04-007-161] 多分支跳频接收机[CHB04-007-162] 无线电设备[CHB04-007-163] 所需信号方向判断器[CHB04-007-164] 直列式光双向链路[CHB04-007-165] 在时域回声消除过程中存在单音时避免假收敛的系统和方法[CHB04-007-166] 用M-阵列的正交沃尔什调制对通信信号进行的频率跟踪[CHB04-007-167] 光时分解复用装置和信号开关法及光时分复用传输系统[CHB04-007-168] 提供改进传输质量的无线接收系统[CHB04-007-169] 用于无线中继的联机记录仪系统[CHB04-007-170] 结合地面蜂窝网络原则的非同步卫星移动通信系统[CHB04-007-171] 一种接收方法和一种接收机[CHB04-007-172] 基站设备,以及一种控制天线射束方向的方法[CHB04-007-173] 提供角度分集的方法,以及基站设备[CHB04-007-174] 基站设备、以及一种控制天线射束的方法[CHB04-007-175] 全双工极宽带通信系统及方法[CHB04-007-176] 数字通信的射频收发信机系统[CHB04-007-177] 多路传播失真信号的再现方法和接收装置[CHB04-007-178] 对多路径光放大器中串扰的抑制[CHB04-007-179] 光学数据发送器装置[CHB04-007-180] 用于和标识卡进行加密通信的近场人体耦合的系统及方法[CHB04-007-181] 数字匹配滤波器[CHB04-007-182] 扩频通信系统中解调和功率控制码元检测的方法和设备[CHB04-007-183] 多值FSK解调窗口比较器[CHB04-007-184] 时分复用-通信/计算设备中的干扰抑制[CHB04-007-185] 光总线网络中的光节点[CHB04-007-186] 用于多速率联播通信的装置[CHB04-007-187] 基于空间的通信系统[CHB04-007-188] 遮盖装置[CHB04-007-189] 个人通信机[CHB04-007-190] 发送和接收圆形/椭圆极化信号的多功能交互通信系统[CHB04-007-191] 用于在多址接入移动通信系统中多速率编码与检测的方法和装置[CHB04-007-192] 光学发送器，具有此光学发送器的端站设备，及光学通信系统[CHB04-007-193] 用于扩展频谱信道分配的方法和设备[CHB04-007-194] 利用回波相消器相位滚动有效跟踪的方法、装置、数字信号处理器和调制解调器、[CHB04-007-195] 码分多址通信系统中移动解调器的搜索接收机结构[CHB04-007-196] 降低了复杂度的信号传输系统[CHB04-007-197] 复杂度减小的信号传输系统[CHB04-007-198] 具有改进的收发间隔的数据存取装置[CHB04-007-199] 高频信号接收装置[CHB04-007-200] 包括天线的便携通信装置,其中在一个频带内人为失配引入在通信装置和天线之间[CHB04-007-201] 在小型光纤节点上提供压缩数字视频的网络设备和方法[CHB04-007-202] 卫星通信系统及其方法[CHB04-007-203] 数据通信系统、数据通信装置及其通信方法[CHB04-007-204] 扩展频谱接收机[CHB04-007-205] 用于数字残留边带调制的装置和方法[CHB04-007-206] 测定数字信号频率偏差的装置及接收机[CHB04-007-207] 多信道通信系统中分开控制多信道增益的电路[CHB04-007-208] 移动无线电通信终端的功率放大器的供电电路[CHB04-007-209] 无线条形码阅读器的通信系统[CHB04-007-210] 在一个无线电通信系统中对所接收信号完成质量测量的方法和多个设备[CHB04-007-211] 发射机应答器用天线驱动装置[CHB04-007-212] 兼容2-声道传输和1-声道传输的n-声道传输[CHB04-007-213] 与5信道传输及2信道传输兼容的7信道传输[CHB04-007-214] 光学放大器，光学放大装置，光学发射机及光涌抑制方法[CHB04-007-215] 用于多波束天线通信系统的干扰消除器装置和干扰消除方法[CHB04-007-216] 采用在交流线上脉冲传输的电力线通信系统[CHB04-007-217] 住宅智能留言通话机[CHB04-007-218] 具有温度补偿电压控制晶体振荡器的无线电接收机[CHB04-007-219] 多级干扰消除器

The first semiconductor lasers into practical, the lasing wavelength 到 um. This corresponds to the fiber loss spectrum of a window, multi-mode optical fiber loss of 2 dB / km. Centered on improving the capacity of optical fiber communication systems, in the 1970s-period. um wavelength in the loss was smaller ( dB/km3, close to zero coefficient of dispersion single mode optical fiber. Soon after to develop further reduce the wear and tear 1. 55um single-mode optical fiberWindow. Back in the late 1960s began to study the long-wavelength ( ym) InGaAsP / InP laser also with single-mode optical fiber into the development of practical systems. uPm lasing wavelength of the laser diode was quick to practical use. To further to achieve the low threshold lasers, good dynamic single-frequency, high temperature and the characteristics of the work of the long-term stability, and have a lot of different structures, high-performance semiconductor lasers, such as the hidden bar buried heterojunction (BH ) Laser, distributed feedback (DFH) laser, sub-Bubu Bragg reflector (DBR) laser, cleavage coupled lasers and quantum well lasers, and so development of the momentum from semiconductor laser discs, optical-times the income copying and processing technology development. As early as 1974 the Netherlands, Philips Research experimental laser-start digital audio recording (DAD) Study. Okazaki in the record store data on the number of inverse laser beam focus will be on the spot diameter and the diameter is proportional to the wavelength of the laser. Therefore, in order to improve access to the information DAD density, to use the laser wavelength as short as possible sources. The first is the use of the He-Ne laser, but because of their size greenhouses limited life, the 1982 listing of the CD (CompactDisk) jukebox on a wavelength of 780 nm semiconductor laser. In recent years. A shorter wavelength such as the 30 nm semiconductor lasers have become commodities. Small size, low price and long life in the semiconductor laser optical information storage and processing has been the largest market. shan of laser research to promote a high-power laser diode (including the array of lasers) development. For there were iron-doped solid medium, such as Nd: YAG, Nd; YVO, such as the wavelength of 808 nm-effective around the peaks, with small size, lasing wavelength of 808 nm semiconductor laser instead of the usual-pumped solid-state laser materials, Can be small in size, Su Pu high efficiency (up to 70%) for dim light of the REE-doped fiber amplifier, used as the source of pumping high-power laser diode was also another important application. For example, using wavelength of 980 nm or 1480 nm, for the tens of milliwatts of power semiconductor laser pump fiber, can get high-gain coefficient, so that optical signals are more than 30 dB gain. Fiber amplifier in the optical fiber communication has been critical short, the need for a variety of applications, semiconductor laser beam is to improve the quality of development, reducing the beam divergence angle to enhance the coherence of space, increasing the high-speed modulation of the so-called dynamic single-model; pressure narrow spectral line width to improve beam The time coherence; further enhance the stability of temperature (that is, high temperature on the strength of the levy), the application of the laser diode is continuously , the band works so that semiconductor lasers generate a new leap forward with the molecular beam epitaxy (MBE) and metal organic compounds chemical vapor deposition (MOCVD) technology development and improvement, can grow to atomic size of the order of ultra-thin layer, which can Formation of the carrier into a holding it is the nature of quantum wells and superlattices. This is a band semiconductor and massive (often referred to as material) Semiconductor completely different shape and structure, and can, if necessary, by changing variables should be ultra-thin layer of the band structure change. The so-called "band project" or "band cutting project" to semiconductor laser with a new vitality, its device performance a big leap. For example, the quantum well semiconductor laser output power for up to tens of watts; temperatures as high as several characteristics of Baidu; laser threshold current of less than 1 mA; multiple quantum modulation doped laser relaxation oscillation frequency of up to 30 GHz, as usual Double-heterojunction semiconductor laser five times in the high-speed modulation than the width of the semiconductor laser is usually a low numberOrder of magnitude, and so on. As quantum well (especially strained quantum well) structure emerges, the visible light laser diode increase the life span, the lasing wavelength further shortened. Have proven that the band works to fundamentally change the face of the semiconductor laser. In the near future, its continuous power output may reach several hundred watts and watts in order to enable it is not only a technical school in the field of information, but also in material processing, and to play an important role.

你在哪？在北京的话，可以去国图的电子阅览室下。外地大城市也应该有类似的场所。先上中国期刊网查查你要的论文吧。

好强大 晕了

不要太挑剔了

The first semiconductor lasers into practical, the lasing wavelength 到 um. This corresponds to the fiber loss spectrum of a window, multi-mode optical fiber loss of 2 dB / km. Centered on improving the capacity of optical fiber communication systems, in the 1970s-period. um wavelength in the loss was smaller ( dB/km3, close to zero coefficient of dispersion single mode optical fiber. Soon after to develop further reduce wear and tear of um single-mode optical fiber Window. Back in the late 1960s began to study the long-wavelength ( ym) InGaAsP / InP laser also with single-mode optical fiber into the development of practical systems. uPm lasing wavelength of the laser diode was quick to practical use. To further to achieve the low threshold lasers, good dynamic single-frequency, high temperature and the characteristics of the work of the long-term stability, and have a lot of different structures, high-performance semiconductor lasers, such as the hidden bar buried heterojunction (BH ) Laser, distributed feedback (DFH) laser, sub-Bubu Bragg reflector (DBR) laser, cleavage coupled lasers and quantum well lasers, and so on. Visible development of the momentum from semiconductor laser discs, optical-times the income copying and processing technology development. As early as 1974 the Netherlands, Philips Research experimental laser-start digital audio recording (DAD) Study. Okazaki in the record store data on the number of inverse laser beam focus will be on the spot diameter and the diameter is proportional to the wavelength of the laser. Therefore, in order to improve access to the information DAD density, to use the laser wavelength as short as possible sources. The first is the use of the He-Ne laser, but because of their size greenhouses limited life, the 1982 listing of the CD (CompactDisk) jukebox on a wavelength of 780 nm semiconductor laser. In recent years. A shorter wavelength such as the 30 nm semiconductor lasers have become commodities. Small size, low price and long life in the semiconductor laser optical information storage and processing has been the largest market. shan of laser research to promote a high-power laser diode (including the array of lasers) development. For there were iron-doped solid medium, such as Nd: YAG, Nd; YVO, such as the wavelength of 808 nm-effective around the peaks, with small size, lasing wavelength of 808 nm semiconductor laser instead of the usual-pumped solid-state laser materials, Can be small in size, Su Pu high efficiency (up to 70%) for dim light of the solid. With REE-doped fiber amplifier, used as the source of pumping high-power laser diode was also another important application. For example, using wavelength of 980 nm or 1480 nm, for the tens of milliwatts of power semiconductor laser pump fiber, can get high-gain coefficient, so that optical signals are more than 30 dB gain. Fiber amplifier in the optical fiber communication has been critical applications. In short, the need for a variety of applications, semiconductor laser beam is to improve the quality of development, reducing the beam divergence angle to enhance the coherence of space, increasing the high-speed modulation of the so-called dynamic single-model; pressure narrow spectral line width to improve beam The time coherence; further enhance the stability of temperature (that is, high temperature on the strength of the levy), the application of the laser diode is continuously expanding5, the band works so that semiconductor lasers generate a new leap forward with the molecular beam epitaxy (MBE) and metal organic compounds chemical vapor deposition (MOCVD) technology development and improvement, can grow to atomic size of the order of ultra-thin layer, which can Formation of the carrier into a holding it is the nature of quantum wells and superlattices. This is a band semiconductor and massive (often referred to as material) Semiconductor completely different shape and structure, and can, if necessary, by changing variables should be ultra-thin layer of the band structure change. The so-called "band project" or "band cutting project" to semiconductor laser with a new vitality, its device performance a big leap. For example, the quantum well semiconductor laser output power for up to tens of watts; temperatures as high as several characteristics of Baidu; laser threshold current of less than 1 mA; multiple quantum modulation doped laser relaxation oscillation frequency of up to 30 GHz, as usual Double-heterojunction semiconductor laser five times in the high-speed modulation than the width of the semiconductor laser is usually a low number Order of magnitude, and so on. As quantum well (especially strained quantum well) structure emerges, the visible light laser diode increase the life span, the lasing wavelength further shortened. Have proven that the band works to fundamentally change the face of the semiconductor laser. In the near future, its continuous power output may reach several hundred watts and watts in order to enable it is not only a technical school in the field of information, but also in material processing, and to play an important role.