go athena#line x loc= spac= line x loc= spac= x loc= spac= x loc= spac= #line y loc= spac= line y loc= spac= y loc= spac= y loc= spac= #init orientation=100 formation including masking off of the nwell#diffus time=30 temp=1000 dryo2 press= hcl=3#etch oxide thick= Implant# implant boron dose=8e12 energy=100 pears #diffus temp=950 time=100 weto2 hcl=3##N-well implant not shown -## welldrive starts herediffus time=50 temp=1000 dryo2 press= hcl=3#diffus time=220 temp=1200 nitro press=1#diffus time=90 temp=1200 nitro press=1#etch oxide all##sacrificial "cleaning" oxidediffus time=20 temp=1000 dryo2 press=1 hcl=3#etch oxide all##gate oxide grown here:-diffus time=11 temp=925 dryo2 press= hcl=3## Extract a design parameter extract name="gateox" thickness oxide adjust implant implant boron dose= energy=10 pearson #depo poly thick= divi=10 ##from now on the situation is 2-D#etch poly left fermi compressdiffuse time=3 temp=900 weto2 press= phosphor dose= energy=20 pearson #depo oxide thick= divisions=8#etch oxide dry thick= arsenic dose= energy=50 pearson #method fermi compressdiffuse time=1 temp=900 nitro press= pattern s/d contact metaletch oxide left alumin thick= divi=2etch alumin right Extract design parameters# extract final S/D Xjextract name="nxj" xj silicon extract the N++ regions sheet resistanceextract name="n++ sheet rho" material="Silicon" extract the sheet rho under the spacer, of the LDD regionextract name="ldd sheet rho" material="Silicon" \ extract the surface conc under the name="chan surf conc" impurity="Net Doping" \ material="Silicon" extract a curve of conductance versus start material="Polysilicon" \ bias= done name="sheet cond v bias" \ curve(bias, material="Silicon" )\ outfile=""# extract the long chan Vtextract name="n1dvt" 1dvt ntype vb= qss=1e10 mirror rightelectrode name=gate x= y= name=source x= name=drain x= name=substrate backsidestructure outfile= plot the structuretonyplot -set Vt Test : Returns Vt, Beta and Theta ################go atlas# set material modelsmodels cvt srh print contact name=gate qf=3e10method newtonsolve init# Bias the drain solve vdrain= # Ramp the gatelog outf= mastersolve vgate=0 vstep= vfinal= name=gatesave outf= plot resultstonyplot -set extract device parametersextract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \ - abs(ave(v."drain"))/)extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) \ * ((ave(v."drain")))extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain"))) \ - ( / (max(abs(v."gate")) - ($"nvt")))quit