人工晶体的合成论文

第一作者发表文章30余篇，部分文章分列如下：1. Sun, X.; Wang, M.; Shi, W.; Fang, C. Study on the growth and Properties of Guanidine doped Triglycine sulfate Crystal Crystal Research and Technology, 1999, 34, 1251-12542. Sun, X.; Wang, M.; Shi, W.; Fang, C. Study on the growth and . properties of Urea doped TGS crystal Function materials, 2000, 31, 63-653. Sun, X.; Xu, X.; Fu, Y.; Wang, S.; Zeng, H.; Li, Y.; Effect of EDTA on the light scatter in KDP crystal J. Crystal Growth, 2000, 217, 404-4094. Sun, X.; Xu, X.; Fu, Y.; Wang, S.; Zeng, H.; Li, Y.; Effect of pyrophospahte on the light scatter in KDP crystal Chinese Science Bulletin, 2000, 455. Sun, X.; Xu, X.; Gao, Z.; Pyrophospahte on the light scatter in KDP crystal Piezoelectrics& Acoustooptics 2000, 22, 3826. Fu, Y.; Gao, Z.; Sun, X.; Wang, S.; Li, Y.; Zeng, H.; Luo, J.; Duan, A.; Wang, J.; Effects of Anions on Rapid Growth and Growth Habit of KDP Crystals Progress in Crystal Growth and Characterization of Materials, 20007. Sun, X.; Xu, X.; Gao, Z.;Study on the light scatter in EDTA doped KDP crystal J. Optpelectronics&Laser, 2001, 12,8. Sun, X.; Xu, X.; Gao, Z.; Effect of EDTA on the optical properties of KDP crystals J. Optpelectronics&Laser 2001, 12,9. Sun, X.; Xu, X.; Gao, Z.; Fu, Y.; Wang, S.; Zeng, H.; Li, Yi.; Effect of pyrophospahte on the light scatter in KDP crystal Chinese Science Bulletin, 2001, 46,10. Sun, X.;Fu, Y.; Gao, Z.; Effects of impurities on growth habits of KDP crystal Chinese Science Bulletin,2001 13, 25211. Sun, X.;Fu, Y.; Gao, Z.; Effects of impurities on growth habits of KDP crystal Chinese Science Bulletin 2001, 14612. Sun, X.; Xu, X.; Gao, Z.; Effect of Boric Acid on Light Scatter in KDP crystal J. Shandong University, 2001, 26,, X.; Xu, X.; Gao, Z.; Fu, Y.; Wang, S.; Zeng, H.; Li, Yi.; J. Crystal Growth, 2001, 226, 52915. Sun, X.; Xu, X.; Gao, Z.; Fu, Y.; Wang, S.; Zeng, H.; Li, Yi.; Relation between phosphate caused light scatter in KDP crystal and its elimination Crystal Research and Technology, 2001, 36, 46516. Sun, X.; Xu, X.; Gao, et al., Effect of Thermal annealing on Scatter Centers in KDP crystals, J. Optpelectronics&Laser,200217. Sun, X.; Xu, X.; Gao, et al., Effect of Growth Condition on Scatter Centers in KDP Crystals, Piezoelectrics& Acoustooptics , , 2002，. Sun, X.; Xu, X.; Gao, et al., Inclusion in DKDP crystals, Chinese Science, Vol46, . Sun, X.; Xu, X.; Gao, et al., Study on Light scattering in KDP crystals, J. Inorganic Materials, , , 2002, 40-4420. Sunxun，Gao zhang-shou, Xu Xin-guang, et al., Inclusions in DKDP crystal, Chinese Science Bulletin, , , 2002, 173-17621. Sunxun, Xu Xin-guang, Sun Daliang, et al., Formation of Liquid Inclusion induced Scatter Centers in KDP(DKDP) crystals, Chinese Science, , 2002,447-45122. Sunxun, Xu Xin-guang, Wang Zhengping, et al., Study on Optical Properties of Rapidly Grown KDP crystal, 人工晶体学报，, ，Gao zhang-shou, Xu Xin-guang, et al., Scatter centers in Rapidly Grown KDP crystals, Crystal Research and Technology, 37 (2002) 120824. Xun Sun, Chang-shui Fang, Qing-tian Gu, Sheng-Lai Wang, et al., Formation of scatter particles in KDP (DKDP) crystals, In Press, Corrected Proof, Available online 22 January 2003

人工晶体的制备就是把组成晶体的基元（原子、分子或离子）解离后又重新使它们组合的过程。按照晶体组分解离手段的不同，人工晶体的制备主要有三大类:熔体法溶液法气相法

人工晶体的制备就是把组成晶体的基元（原子、分子或离子）解离后又重新使它们组合的过程。按照晶体组分解离手段的不同，人工晶体的制备主要有三大类：熔体法、溶液法和气相法。 一种晶体选择何种技术生长，取决于晶体的物理、化学性质和应用要求。选择的一般原则是：♣有利于快速生长出具有较高实用价值、符合一定技术要求的晶体；♣有利于提高晶体的完整性，严格控制晶体中的杂质和缺陷；♣有利于提高晶体的利用率、降低成本。生长大尺寸的晶体始终是晶体生长工作者追求的 重要目标；♣有利于晶体的后加工和器件化；♣有利于晶体生长的重复性和产业化；⒈溶液法生长溶液法的基本原理是将原料（溶质）溶解在溶剂（如水）中，采取适当的措施造成溶液的过饱和状态，使晶体在其中生长。具体地包含有水溶液法、水热法与助熔剂法等。⑴降温法基本原理:利用物质大的溶解度和较大的正溶解度温度系数，在晶体生长过程中逐渐降低温度，使析出的溶质不断在晶体上生长。关键：晶体生长过程中掌握适合的降温速度，使溶液始终处在亚稳态区内并维持适宜的过饱和度。要求：物质溶解度温度系数不低于℃。⑵恒温蒸发法基本原理：将溶剂不断蒸发，使溶液保持在过饱和状态，从而使晶体不断生长。特点：比较适合于溶解度较大而溶解度温度系数很小或者是具有负温度系数的物质。与流动法一样也是在恒温条件下进行的。(3)温差水热法基本原理：使用特殊设计的装置，人为地创造一个高温高压环境，由于高温高压下水的解离常数增大、黏度大大降低、水分子和离子的活动性增加，可使那些在通常条件下不溶或难溶于水的物质溶解度、水解程度极大提高，从而快速反应合成新的产物。