半导体的分类，按照其制造技术可以分为：集成电路器件，分立器件、光电半导体、逻辑IC、模拟IC、储存器等大类，一般来说这些还会被分成小类。此外还有以应用领域、设计方法等进行分类，虽然不常用，但还是按照IC、LSI、VLSI（超大LSI）及其规模进行分类的方法。此外，还有按照其所处理的信号，可以分成模拟、数字、模拟数字混成及功能进行分类的方法。
半导体五大特性∶电阻率特性，导电特性，光电特性，负的电阻率温度特性，整流特性。
半导体应用
最早的实用“半导体”是「电晶体（Transistor）/ 二极体（Diode）」。
一、在 无�电收音机（Radio）及 电视机（Television）中，作为“讯号放大器 /整流器”用。
二、近来发展「太阳能（Solar Power）」，也用在「光电池（Solar Cell）」中。
三、半导体可以用来测量温度，测温范围可以达到生产、生活、医疗卫生、科研教学等应用的70%的领域，有较高的准确度和稳定性，分辨率可达0.1℃，甚至达到0.01℃也不是不可能，线性度0.2%，测温范围-100~+300℃，是性价比极高的一种测温元件。
半导体材料的制造
为了满足量产上的需求，半导体的电性必须是可预测并且稳定的，因此包括掺杂物的纯度以及半导体晶格结构的品质都必须严格要求。常见的品质问题包括晶格的错位（dislocation）、双晶面（twins），或是堆栈错误（stacking fault）都会影响半导体材料的特性。对于一个半导体元件而言，材料晶格的缺陷通常是影响元件性能的主因。
目前用来成长高纯度单晶半导体材料最常见的方法称为裘可拉斯基制程（Czochralski process）。这种制程将一个单晶的晶种（seed）放入溶解的同材质液体中，再以旋转的方式缓缓向上拉起。在晶种被拉起时，溶质将会沿着固体和液体的接口固化，而旋转则可让溶质的温度均匀。
semi-conductor
英['semɪkənd'ʌktər] 美['semɪkənd'ʌktər]
n. 半导体;
[例句]A semi-conductor has some important properties.
半导体有一些重要的特性。
2, 1962 a semiconductor laser
In the theory of direct and indirect effects, and in 1960 the ruby laser, driven by the United States and the Soviet Union scientists to intensify the semiconductor laser research. In particular, in January 1962, Mei Beige (s.Mayburg) reported on the statement from the GaAsPN be 100% of the fluorescence quantum efficiency, resulting in the latter part of the United States in 1962, the four laboratories almost simultaneously announced the successful development of the same junction GaAs Semiconductor Laser,
1963 Basuo Fu also reported the development of GaAs PN junction semiconductor lasers. The above-mentioned "first generation" of the semiconductor laser research workers have made important contributions. Because very few of them before in semiconductor materials produced by stimulated emission of public exposition, so that they do not get enough inspiration. In surrounding the use of what kind of semiconductor materials to get the high efficiency of the laser, to form optical resonator, how to test whether a laser output and how to assess the output of semiconductor lasers on the issues, they made a successful exploration and Practice. For example, the choice of direct bandgap semiconductor GaAs for the active material with the natural crystal cleavage surface for optical resonator; spectrum from the output line width of the narrow beam and far-field characteristics of the changes to determine the production of laser. Despite the "first generation" of semiconductor lasers are the same, only in liquid nitrogen temperature pulse, thus no practical value, but some of their basic theory and practice is still meaningful.
Three,
Implementation semiconductor lasers at room temperature for work (1962-1970), the same structure of the laser diode has experienced five years of wandering, the doors were the future of the semiconductor laser once doubt, and even some of the early semiconductor lasers create a test because At that time, the laser diode has been unable to work at room temperature half-way retreat. But then Bell Labs research director Gore a solid (Golt) scientifically foresee, at room temperature for the semiconductor laser will be in the future optical communications play an important role. 1967 in the history of the development of semiconductor laser an important breakthrough in the past is an anti-proliferation law by a PN junction of the same practices and methods used LPE made of a single heterogeneous shrink laser, in order to achieve the air temperature pulse work The semiconductor lasers. The first time in three years (1970), the Bell Labs researchers also achieved a double in one stroke the semiconductor heterostructure laser, the laser diode has an epoch-making progress - at room temperature for work. This is perhaps the Bell experiments in optical fiber communications space has become a leader on one of the basic point. During this period, the semiconductor laser research work mainly in the following areas:
(1) injected around the realization of GaAs semiconductor lasers at room temperature for the work, its structure has conducted in-depth research, heterogeneous structure is a major breakthrough. In order to improve the work of semiconductor lasers, in the active region into the flow of the CD and its radiation from within the compound produced by a photon restrictions on the multi-solid solution to form a good crystallization of the epitaxial growth methods.
(2) search for a new semiconductor laser material, the expansion of laser-band laser scope and improve the emission characteristics. In a few years, far from the ultraviolet to the far-infrared of a broad-band, to explore a lot of the laser can produce the material, which is still widely used.
(3) In order to make semiconductor lasers have practical applications, the dynamic nature of the laser was studied.
