光电器件论文

电荷注入不平衡是制约钙钛矿型发光二极管（PeLEDs）效率的主要问题之一。通过对多空穴传输层的器件结构进行了设计，成功地实现了高效的PeLEDs器件。然而，在一个典型的溶液法制备的PeLEDs中，多层HTL很容易被下一层的油墨重新溶解，这不仅严重恶化了HTLs的电性能，而且影响了顶层钙钛矿薄膜的质量。

来自苏州大学的研究人员针对这一现象， 通过在HTLs和钙钛矿层之间插入一层薄的原子层沉积氧化铝（Al2O3）层，成功的改善了界面接触，从而获得具有增强特性和平衡电荷注入的钙钛矿薄膜。 另外，由于适当的折射率（r），Al2O3层的存在也有利于PeLEDs的出光耦合。结果表明，所制备的绿色PeLEDs具有良好的重复性和17.0%的外量子效率，比不添加Al2O3的器件提高约60%。该工作为提高钙钛矿型光电器件中电荷传输层与钙钛矿之间的界面接触提供了一条很有前途的途径。相关论文以题目为“High Efficiency Perovskite Light-Emitting Diodes with Improved Interfacial Contact”发表在ACS Applied Materials & Interfaces 期刊上。

论文链接：

金属卤化物钙钛矿由于其独特的光电特性，是一种很有前途的发光二极管材料。在过去的几年里在器件方面取得了重大进展。在典型的PeLEDs中，器件通常由电极、电子传输层（ETL）、发射层（EML）和空穴传输层（HTL）组成。良好的能量水平校准是提高电荷注入效率的关键。切相关，因此迫切需要开发有效的方法来增强电荷传输层与EML之间的界面接触。在这种情况下，需要在钙钛矿薄膜和电荷传输层之间形成一个更可控、质量更高的界面层。在这里，作者开发了一种通过在中间插入原子层沉积处理过的氧化铝层来提高界面质量的方法。得到了很大改善的界面接触，同时也增强了钙钛矿前驱体在其上的润湿性，从而促进了高质量钙钛矿薄膜的形成。

图1.（a）底层再溶解示意图。（b）ITO / TFB / PVK的AFM高度和线扫描。 AFM图像的扫描区域为5μm×5μm。（c）ITO / TFB / PVK / Al2O3的AFM高度和线扫描（n = 50）。 AFM图像的扫描区域为5μm×5μm。

图2.（a）用不同循环Al2O3层覆盖的TFB / PVK的水接触角。（b）TFB / PVK / Al2O3（n = 0、30、50和70）上钙钛矿薄膜的SEM图像和（c）AFM图像。SEM图像的比例尺为200 nm。AFM图像的扫描区域为10μm×10μm。

图3.（a）沉积在TFB / PVK / Al2O3上的钙钛矿薄膜的PL强度（n = 0、30、50和70）。（b）沉积在TFB / PVK / Al2O3上的钙钛矿膜的PL强度与时间的关系（n = 0、30、50和70）。（c）具有不同循环Al2O3层的器件在514 nm波长处的模拟光通量。

图4.（a）具有ITO / TFB / PVK / Al2O3/钙钛矿/ TPBi /LiF / Al结构（n = 50）的器件的截面SEM图像。（b）PeLED器件结构的能量图。（c）具有n = 0、30、50和70的器件的J-V-L曲线。（d）具有或不具有Al2O3（n = 50）层的器件的EQE-J曲线。（e）n = 0、30、50和70的器件的EQE分布。（f）不使用（W / O）或使用Al2O3（n = 50）的器件的工作时间，其亮度衰减。

（文：爱新觉罗星）

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